Download Analog Circuit Design: Discrete & Integrated by Sergio Franco PDF

By Sergio Franco

This textbook is meant for EE majors envisioning business careers in analog electronics. Analog integrated-circuit (IC) designers, product, method, and reliability engineers, try and test-development engineers, analog functions, advertising, and customer-support engineers are continuously in robust call for.

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With ion implantation, the silicon crystal is bombarded with ions of the desired impurity material, which then remain embedded in the crystal. Doped silicon can also be grown directly as a crystal, starting with a suitable mixture of silicon and impurity atoms of the desired type. The donor and acceptor concentrations (atoms/cm3), also called doping densities, are denoted as ND and NA, respectively. 4 3 1010/cm3). Consequently, at room temperature, silicon doped with donor impurities, also called n-type silicon, has n > ND, while silicon doped with acceptor impurities, also called p-type silicon, has p > NA.

Using the subscript zero to identify equilibrium concentrations, we exploit Eq. 30a) 5 2 3 102/cm3 NA and we exploit Eq. ) Likewise, electrons will diffuse in the opposite direction. However, every hole diffusing across the metallurgical junction leaves behind a negatively charged ion, just as every diffusing electron leaves behind a positively charged ion. These ions are bound to their fixed positions in the crystal lattice and do not contribute to current. 39 Equilibrium conditions in a pn slab.

37 shows the dependence of ␮n and ␮p on the total doping density (NA 1 ND), at room temperature. The higher mobility (by a factor of two to three) exhibited by electrons compared to holes is the primary reason why n-type materials are generally preferred over p-type materials, particularly in the fabrication of devices intended for high-speed operation. Lastly, it must be pointed out that the linear relationships between velocities and electric field, expressed as vn 5 ␮nE and vp 5 ␮pE, hold only up to a certain field strength, typically on the order of 5 kV/cm.

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