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For MOS transistors, it can be shown that the maximum gain decreases with larger bias currents in a square-root relationship. This is one of the reasons why it is possible to realize a single-transistor BJT amplifier with a much larger gain than would result if a MOS transistor were used, especially at high current levels (and therefore at high frequencies). The high-frequency operation of a BJT is limited by the capacitances of the small-signal model. 1. 166) where Ci is the depletion capacitance of the base-emitter junction.

Tm and L = 2 um . tm)' and the perimeter of each is P s = P d = 108 urn .. 02 pF C Sb = Cj(As + WL) + (C j_ swx P s) = 0_17 pF Cdb = (CjxAd)+(Cj_SWxPd) = 0_12 pF Note that the source-bulk and drain-bulk capacitances are significant compared to the gate-source capacitance, Thus, for high-speed circuits, it is important to 36 Chapter 1 • Integrated-Circuil Devices and Modelling keep the areas and perimeters of drain and source junctions as small as possible (possibly by sharing junctions between transistors, as seen in the next chapter).

107) L where 'ds is the small-signal drain-source resistance (and 9ds is the conductance). 60). 9, find the triode model parameters when V DS is near zero. 368 mA/V Note that this conductance value is the same as the transconductance of the transistor, 9m' in the active region. 72 kQ. The accurate modelling of the high-frequency operation ofa transistor in the triode region is nontrivial (even with the use of a computer simulation). A moderately accurate model is shown in Fig. / Channel-to-substrate capacitance Fig.

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